Doping effects on the composition, electric and optical properties of MBE-grown 1.1 eV GaNAsSb layers
| Autor: | Iván Lombardero, D. Pucicki, Mario Ochoa, Carlos Algora, K. Bielak, Wan Khai Loke, J. I. Davies, Soon Fatt Yoon, Iván García, Mercedes Gabas, Laura Barrutia, A. D. Johnson, Kian Hua Tan, D. Fuertes-Marrón, S. Wickasono, Efraín Ochoa-Martínez |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science Materiales business.industry Doping 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Energías Renovables 0103 physical sciences Materials Chemistry Optoelectronics Composition (visual arts) Electrónica Electrical and Electronic Engineering 0210 nano-technology Electronic band structure business |
| Zdroj: | Semiconductor Science and Technology, 2020-10-06, Vol. 35 Archivo Digital UPM Universidad Politécnica de Madrid |
| Popis: | Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is the band-gap tunability, depending on the nitrogen content. In this work we have focussed our attention on the indium free dilute nitrides, i.e. GaNAsSb with a bandgap of around 1.1 eV, to study the effects that doping has on the crystalline structure, electrical and optical properties of the material. For such purpose, p-doped and n-doped GaNAsSb layers were grown by molecular beam epitaxy and characterized using x-ray diffraction, spectroscopic ellipsometry and photoreflectance among other techniques. The GaNAsSb optical properties match the double band-anticrossing model which is the proposed one to explain the dilute nitride band structure. However, the determined optical bandgap value does not follow any trend with doping, neither with concentration nor type. This is related with doping effects on the crystalline quality and layer composition, thus inducing a Sb gradient along layer thickness together with variations in N and Sb concentrations for different doping levels. Besides these structural variations, the complex refraction index, Hall mobility and carrier concentration as a function of temperature have been determined for these GaNAsSb layers. |
| Databáze: | OpenAIRE |
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