Reduction of current collapse in AlGaN/GaN MISHEMT with bilayer SiN/Al 2 O 3 dielectric gate stack
| Autor: | S. Vicknesh, K. Ranjan, Subramaniam Arulkumaran, Geok Ing Ng, M. J. Anand |
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| Přispěvatelé: | School of Electrical and Electronic Engineering, Research Techno Plaza, Temasek Laboratories |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Silicon business.industry Bilayer Transistor chemistry.chemical_element Engineering::Electrical and electronic engineering::Electric power [DRNTU] Dielectric Substrate (electronics) Condensed Matter Physics law.invention chemistry law Dispersion (optics) Optoelectronics Current (fluid) business Order of magnitude |
| Zdroj: | physica status solidi c. 10:1421-1425 |
| ISSN: | 1610-1642 1862-6351 |
| DOI: | 10.1002/pssc.201300219 |
| Popis: | We have studied the drain current dispersion characteristics of conventional AlGaN/GaN HEMTs and SiN/Al2O3/AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMT) fabricated on silicon substrate. The fabricated MISHEMT exhibited an IDmaxof >1000 mA/mm and gmmax of 241 mS/mm. Compared to conventional AlGaN/GaN HEMTs, about an order of magnitude lower gate leakage current and a ∼ 60% reduction in drain current (ID) collapse was observed in the MISHEMTs. The observation of low ID collapse is due to the occurrence of low interface state density (6.39 × 1010 eV-1 cm-2) between the bilayer dielectric (SiN/Al2O3) and GaN surface which is confirmed through the AC-conductance method. (© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim) |
| Databáze: | OpenAIRE |
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