2D Carbon Material/Silicon Heterojunctions for Fast Response Self-Powered Photodetector
| Autor: | Ivan Komissarov, N. G. Kovalchuk, Maurizio Boscardin, L. Di Mario, Daniele Catone, Matteo Salvato, Michele Crivellari, M. De Crescenzi, Paola Castrucci, Serghej L. Prischepa, Mattia Scagliotti |
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| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
Silicon heterojunction Photodetector chemistry.chemical_element Bioengineering 02 engineering and technology Carbon nanotube 01 natural sciences Settore FIS/03 - Fisica della Materia law.invention Graphenecarbon law pulsed laser 0103 physical sciences General Materials Science Electrical and Electronic Engineering carbon nanotube photodetector nanotube 010302 applied physics business.industry Graphene Heterojunction 021001 nanoscience & nanotechnology Condensed Matter Physics Computer Science Applications chemistry Optoelectronics 0210 nano-technology business Carbon Biotechnology |
| Zdroj: | International Conference Nanomeeting 2019, Minsk, 21-24/05/2019 info:cnr-pdr/source/autori:Scagliotti, M.; Salvato, M.; De Crescenzi, M.; Castrucci, P.; Kovalchuk, N. G.; Komissarov, I., V; Prischepa, S. L.; Catone, D.; Di Mario, L.; Boscardin, M.; Crivellari, M./congresso_nome:International Conference Nanomeeting 2019/congresso_luogo:Minsk/congresso_data:21-24%2F05%2F2019/anno:2019/pagina_da:/pagina_a:/intervallo_pagine |
| Popis: | Photodetectors (PDs) based on single-walled carbon nanotube film/silicon and graphene/silicon heterojunctions have been realized for fast applications. We investigated the response of the PDs to femtosecond pulsed laser using a three-electrode configuration for photoconductive operations. Both junction PDs exhibit rise times of some nanoseconds, detecting light from ultraviolet (275[Formula: see text]nm) to infrared (1150[Formula: see text]nm). Applying a gate voltage [Formula: see text], the rise time decreases down to about 1[Formula: see text]ns, making our devices comparable to most commercial PDs. |
| Databáze: | OpenAIRE |
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