Injection Level Spectroscopy: A Novel Non-Contact Contamination Analysis Technique in Silicon

Autor:	George Ferenczi, Tibor Pavelka, Peter Tutto
Rok vydání:	1991
Předmět:	Materials science Silicon business.industry Photoconductivity General Engineering General Physics and Astronomy chemistry.chemical_element Nanotechnology Carrier lifetime Contamination Light intensity Optics chemistry Optoelectronics Wafer business Spectroscopy Microwave Excitation
Zdroj:	Japanese Journal of Applied Physics. 30:3630
ISSN:	1347-4065 0021-4922
DOI:	10.1143/jjap.30.3630
Popis:	Microwave photoconductivity decay was measured in the function of the excitation light intensity. Using a new approach to analyze recombination lifetime data an experimental method is presented which is capable of producing qualitative lateral distribution maps of different metal contaminants in a silicon wafer.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::835b9bf48202e9721e3a7fad0691c626 https://doi.org/10.1143/jjap.30.3630 Zobrazit plný text záznamu