Coupled Sublattice Melting and Charge-Order Transition in Two Dimensions
| Autor: | Tyler S. Smith, Diego Soler-Polo, Hanno H. Weitering, César González, Fernando Flores, Fangfei Ming, José Ortega, Daniel G. Trabada |
|---|---|
| Přispěvatelé: | UAM. Departamento de Física Teórica de la Materia Condensada |
| Rok vydání: | 2019 |
| Předmět: |
Multistep Melting
Phase transition Materials science Silicon Charge Ordering Transition Alloy General Physics and Astronomy chemistry.chemical_element FOS: Physical sciences engineering.material 01 natural sciences Topological defect Silicon Substrates Lattice (order) 0103 physical sciences Monolayer Mesoscale and Nanoscale Physics (cond-mat.mes-hall) 010306 general physics Two-Dimensional Materials Condensed Matter - Mesoscale and Nanoscale Physics Física Topological Defect chemistry Chemical physics Melting Transitions engineering Two-Dimensional Melting Theoretical Investigations |
| Zdroj: | Biblos-e Archivo. Repositorio Institucional de la UAM instname |
| DOI: | 10.48550/arxiv.1911.11921 |
| Popis: | Two-dimensional melting is one of the most fascinating and poorly understood phase transitions in nature. Theoretical investigations often point to a two-step melting scenario involving unbinding of topological defects at two distinct temperatures. Here we report on a novel melting transition of a charge-ordered K-Sn alloy monolayer on a silicon substrate. Melting starts with short-range positional fluctuations in the K sublattice while maintaining long-range order, followed by longer-range K diffusion over small domains, and ultimately resulting in a molten sublattice. Concomitantly, the charge-order of the Sn host lattice collapses in a multi-step process with both displacive and order-disorder transition characteristics. Our combined experimental and theoretical analysis provides a rare insight into the atomistic processes of a multi-step melting transition of a two-dimensional materials system. Comment: 13 pages, 5 figures |
| Databáze: | OpenAIRE |
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