| Autor: |
Albert Chin, Hsuan-Ling Kao, Tsu Chang, Szu-Ling Liu, H.M. Chang, Chun-Hu Cheng |
| Rok vydání: |
2011 |
| Předmět: |
|
| Zdroj: |
ECS Meeting Abstracts. :2098-2098 |
| ISSN: |
2151-2043 |
| DOI: |
10.1149/ma2011-02/31/2098 |
| Popis: |
In this paper, the commercial 0.5-μm AlGaAs/InGaAs/GaAs pseudo-morphic high electron mobility transistors were subjected to both high-drain voltage and high-temperature stresses for investigating reliability issues. The results reveal that the stress-induced trapping phenomena near two-dimensional electron gas layer should be responsible for the different drain current collapses. The decay level of the DC and the small-signal characteristics increases with the stress voltage and/or the operation temperature. The self-consistent model was established through the de-embedded and the non-linear fitting processes, which can be used to estimate the DC and RF small-signal characteristics degradation under high-drain voltage and high-temperature stress. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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