X-ray Based in Situ Investigation of Silicon Growth Mechanism Dynamics - Application to Grain and Defect Formation
| Autor: | Nathalie Mangelinck-Noël, Elodie Boller, Vasiliki Stamelou, M.G. Tsoutsouva, Alexander Rack, Thècle Riberi-Béridot, Isabelle Périchaud, Guillaume Reinhart, Fabrice Guittonneau, Maike Becker, Hadjer Ouaddah, Laurent Barrallier, Gabrielle Regula, Jean-Paul Valade, José Baruchel |
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| Přispěvatelé: | Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), Mechanics surfaces and materials processing (MSMP), Arts et Métiers Sciences et Technologies, HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM), European Synchrotron Radiation Facility (ESRF), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), HESAM Université (HESAM)-HESAM Université (HESAM), Aix Marseille Université (AMU), Arts et Métiers Paristech ENSAM Aix-en-Provence, Laboratoire de Conception Fabrication Commande (LCFC), HESAM Université (HESAM)-HESAM Université (HESAM)-Université de Lorraine (UL), MECASURF (MECASURF), High-resolution Diffraction Topography Beamline (ID19), Nanyang Technological University [Singapour], Université de Lorraine (UL)-Arts et Métiers Sciences et Technologies |
| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
matière Condensée: Science des matériaux [Physique]
Silicon Materials science General Chemical Engineering MATERIALS RESEARCH Nucleation Twins Synchrotron radiation chemistry.chemical_element 02 engineering and technology Growth Bragg diffraction imaging 7. Clean energy 01 natural sciences law.invention Strain Inorganic Chemistry law Matériaux [Chimie] 0103 physical sciences lcsh:QD901-999 [CHIM.CRIS]Chemical Sciences/Cristallography X-ray radiography and topography Dislocation General Materials Science BRAGG DIFFRACTION DISLOCATIONS defects 010302 applied physics DIFFRACTION TOPOGRAPHY Bragg's law Cristallographie [Chimie] [CHIM.MATE]Chemical Sciences/Material chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics Engineering physics Synchrotron Grains chemistry [PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci] lcsh:Crystallography Deformation (engineering) TWIN STRUCTURES 0210 nano-technology Crystal twinning IN SITU EXPERIMENTS |
| Zdroj: | Crystals Crystals, 2020, 10 (7), pp.555. ⟨10.3390/cryst10070555⟩ Crystals, MDPI, 2020, 10 (7), pp.555. ⟨10.3390/cryst10070555⟩ 'Crystals ', vol: 10, pages: 555-1-555-25 (2020) Crystals, Vol 10, Iss 555, p 555 (2020) |
| ISSN: | 2073-4352 |
| Popis: | International audience; To control the final grain structure and the density of structural crystalline defects in silicon (Si) ingots is still a main issue for Si used in photovoltaic solar cells. It concerns both innovative and conventional fabrication processes. Due to the dynamic essence of the phenomena and to the coupling of mechanisms at different scales, the post-mortem study of the solidified ingots gives limited results. In the past years, we developed an original system named GaTSBI for Growth at high Temperature observed by Synchrotron Beam Imaging, to investigate in situ the mechanisms involved during solidification. X-ray radiography and X-ray Bragg diffraction imaging (topography) are combined and implemented together with the running of a high temperature (up to 2073 K) solidification furnace. The experiments are conducted at the European Synchrotron Radiation Facility (ESRF). Both imaging techniques provide in situ and real time information during growth on the morphology and kinetics of the solid/liquid (S/L) interface, as well as on the deformation of the crystal structure and on the dynamics of structural defects including dislocations. Essential features of twinning, grain nucleation, competition, strain building, and dislocations during Si solidification are characterized and allow a deeper understanding of the fundamental mechanisms of its growth. |
| Databáze: | OpenAIRE |
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