Connector-less SiC power modules with integrated shunt—Low-profile design for low inductance and low cost
| Autor: | Dean P. Hamilton, Michael Meisser, Horst Demattio, Thomas Blank |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
business.industry Multiphysics 020208 electrical & electronic engineering 05 social sciences Electrical engineering 02 engineering and technology law.invention Inductance Power rating law Power module Logic gate MOSFET 0202 electrical engineering electronic engineering information engineering Electronic engineering 0501 psychology and cognitive sciences Resistor business 050107 human factors Diode |
| Popis: | The Publisher's final version can be found by following the DOI link. This paper presents the design, manufacture and characterization of connector-less 1200 V SiC MOSFET half-bridge power modules based on AlN DCB substrate. The modules contain four MOSFETs and no external antiparallel diodes. They are rated for a current of 40 A and include a shunt. Static and dynamic measurement results are presented. Multiphysics simulations are used to validate the measured data. The modules show a power path inductance below 3 nH. The power rating of the implemented chip shunt resistors is sufficient for the performed characterizations but requires revision. The switching loss at turn-on is 340 μJ at 23 A, 800 V, the turn-off loss is well below 50 μJ, principally allowing MHz operation in resonant mode. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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