Determination of mobility edge in presence of metal-to-insulator transition
| Autor: | Yu. A. Pusep, M. A. Tito |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Condensed matter physics FOTOLUMINESCÊNCIA Exciton Fermi level Heterojunction Insulator (electricity) 02 engineering and technology Electron Condensed Matter::Mesoscopic Systems and Quantum Hall Effect 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences symbols.namesake 0103 physical sciences symbols Condensed Matter::Strongly Correlated Electrons General Materials Science Electrical and Electronic Engineering 010306 general physics 0210 nano-technology Quasi Fermi level Recombination Quantum well |
| Zdroj: | Repositório Institucional da USP (Biblioteca Digital da Produção Intelectual) Universidade de São Paulo (USP) instacron:USP |
| ISSN: | 0749-6036 |
| DOI: | 10.1016/j.spmi.2016.12.060 |
| Popis: | Determination of mobility edge in presence of metal-to-insulator transition Recombination dynamics of excitons was studied in multiple narrow quantum well GaAs/AlGaAs heterostructures. Disorder generated by interface roughness considerably affects transport of the conduction band electrons and at appropriate quantum well width results in a metal-to insulator transition. Localization of the electrons was found to be responsible for the exciton recombination time measured in the vicinity of the metal-to-insulator transition. Measurement of the exciton recombination time as a function of the energy allowed for determination of the critical energy of the mobility edge attributed to the conduction band electrons. The mobility edge energy obtained in this way demonstrates intersection with the Fermi level energy at the critical disorder corresponding to the metal-to-insulator transition. |
| Databáze: | OpenAIRE |
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