Absence of carrier recombination associated with the defect pool model in intrinsic amorphous silicon layers: Evidence from current–voltage characteristics on p–i–n and n–i–p solar cells
| Autor: | Deng, J., Pearce, J., Koval, R, Vlahos, V., Collins, R., Wronski, C, Wronski, R. |
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| Přispěvatelé: | Pennsylvania State University (Penn State), Penn State System, Michigan Technological University (MTU) |
| Rok vydání: | 2003 |
| Předmět: |
010302 applied physics
Amorphous silicon Amorphous semiconductors Materials science Physics and Astronomy (miscellaneous) Silicon Analytical chemistry chemistry.chemical_element 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Crystallographic defect [SPI.MAT]Engineering Sciences [physics]/Materials [SPI.TRON]Engineering Sciences [physics]/Electronics chemistry.chemical_compound chemistry Current voltage 0103 physical sciences 0210 nano-technology Recombination |
| Zdroj: | Applied Physics Letters Applied Physics Letters, American Institute of Physics, 2003, 82 (18), pp.3023-3025. ⟨10.1063/1.1571985⟩ Electrical and Computer Engineering Publications |
| ISSN: | 1077-3118 0003-6951 |
| Popis: | Forward bias current‐voltage characteristics ( JD ‐V) were studied for both p ‐i ‐n ~superstrate! and n ‐i ‐p ~substrate! (a-SiC:H p)/(a-Si:H i) solar-cell structures having different p/i interface layers and different thickness i-layers. Contributions of the p/i interfaces to the J D ‐V characteristics were separated, and the dependence on the thickness of the i-layers was established. Equivalence was observed in a comparison of the characteristics of p ‐i ‐n and n ‐i ‐p cells. The various JD ‐V characteristics are found to be consistent with uniform densities of defects in the i-layers, and thus inconsistent with the spatially varying large densities of defects predicted for solar-cell structures by the defect pool model. © 2003 American Institute of Physics. @DOI: 10.1063/1.1571985# |
| Databáze: | OpenAIRE |
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