A Novel 8T XNOR-SRAM: Computing-in-Memory Design for Binary/Ternary Deep Neural Networks
| Autor: | Nader Alnatsheh, Youngbae Kim, Jaeik Cho, Kyuwon Ken Choi |
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| Jazyk: | angličtina |
| Rok vydání: | 2023 |
| Předmět: | |
| Zdroj: | Electronics Volume 12 Issue 4 Pages: 877 |
| ISSN: | 2079-9292 |
| DOI: | 10.3390/electronics12040877 |
| Popis: | Deep neural networks (DNNs) and Convolutional neural networks (CNNs) have improved accuracy in many Artificial Intelligence (AI) applications. Some of these applications are recognition and detection tasks, such as speech recognition, facial recognition and object detection. On the other hand, CNN computation requires complex arithmetic and a lot of memory access time; thus, designing new hardware that would increase the efficiency and throughput without increasing the hardware cost is much more critical. This area in hardware design is very active and will continue to be in the near future. In this paper, we propose a novel 8T XNOR-SRAM design for Binary/Ternary DNNs (TBNs) directly supporting the XNOR-Network and the TBN DNNs. The proposed SRAM Computing-in-Memory (CIM) can operate in two modes, the first of which is the conventional 6T SRAM, and the second is the XNOR mode. By adding two extra transistors to the conventional 6T structure, our proposed CIM showed an improvement up to 98% for power consumption and 90% for delay compared to the existing state-of-the-art XNOR-CIM. |
| Databáze: | OpenAIRE |
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