Optical anisotropy of InAs monolayer in (311)-oriented GaAs matrix
| Autor: | Zhiyu Yang, Wang Zhan-Guo, Liang Ji-Ben, Y. H. Chen, Xu Bo |
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| Předmět: |
Materials science
Condensed matter physics Condensed Matter::Other General Physics and Astronomy Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter::Materials Science Matrix (mathematics) Quantum dot Monolayer Density of states Reflectance difference spectroscopy Anisotropy Layer (electronics) Quantum well |
| Zdroj: | Hong Kong University of Science and Technology |
| Popis: | In-plane optical anisotropy which comes from the heavy hole and the light hole transitions in an InAs monolayer inserted in (311)-oriented GaAs matrix is observed by reflectance difference spectroscopy. The observed steplike density of states demonstrates that the InAs layer behaves like a two-dimensional quantum well rather than isolated quantum dots. The magnitude of the anisotropy is in good agreement with the intrinsic anisotropy of (311) orientation quantum wells, indicating that there is little structural or strain anisotropy of the InAs layer grown on (311)-oriented GaAs surface. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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