Wafer-Scale Synthesis of High-Quality Semiconducting Two-Dimensional Layered InSe with Broadband Photoresponse
| Autor: | Shu Ping Lau, Shenghuang Lin, Huihong Lin, Wenjing Jie, Jianhua Hao, Chun Hin Mak, Zhibin Yang, Feng Yan, Xianfeng Yang |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
business.industry Band gap General Engineering General Physics and Astronomy 02 engineering and technology 010402 general chemistry 021001 nanoscience & nanotechnology 01 natural sciences Atomic units 0104 chemical sciences Characterization (materials science) Pulsed laser deposition Crystallinity Semiconductor Monolayer Optoelectronics General Materials Science Wafer 0210 nano-technology business |
| Zdroj: | ACS Nano. 11:4225-4236 |
| ISSN: | 1936-086X 1936-0851 |
| DOI: | 10.1021/acsnano.7b01168 |
| Popis: | Large-scale synthesis of two-dimensional (2D) materials is one of the significant issues for fabricating layered materials into practical devices. As one of the typical III-VI semiconductors, InSe has attracted much attention due to its outstanding electrical transport property, attractive quantum physics characteristics, and dramatic photoresponse when it is reduced to atomic scale. However, scalable synthesis of single phase 2D InSe has not yet been achieved so far, greatly hindering further fundamental studies and device applications. Here, we demonstrate the direct growth of wafer-scale layered InSe nanosheets by pulsed laser deposition (PLD). The obtained InSe layers exhibit good uniformity, high crystallinity with macro texture feature, and stoichiometric growth by in situ precise control. The characterization of optical properties indicates that PLD grown InSe nanosheets have a wide range tunable band gap (1.26-2.20 eV) among the large-scale 2D crystals. The device demonstration of field-effect transistor shows the n-type channel feature with high mobility of 10 cm |
| Databáze: | OpenAIRE |
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