W‐Band MMIC chipset in 0.1‐μm mHEMT technology
| Autor: | Sosu Kim, Jongmin Lee, Hyun-Wook Jung, Dong Min Kang, Mihui Seo, Hyung Sup Yoon, Byoung-Gue Min, Jongpil Kim, Sung-Jae Chang, Wansik Kim, Jooyong Jung, Woo Jin Chang |
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| Jazyk: | angličtina |
| Rok vydání: | 2020 |
| Předmět: |
Materials science
General Computer Science Chipset business.industry Frequency multiplier frequency multiplier mmic lcsh:Electronics lcsh:TK7800-8360 image‐rejection mixer Electronic Optical and Magnetic Materials lcsh:Telecommunication W band lna lcsh:TK5101-6720 mhemt Optoelectronics Electrical and Electronic Engineering business Monolithic microwave integrated circuit |
| Zdroj: | ETRI Journal, Vol 42, Iss 4, Pp 549-561 (2020) |
| ISSN: | 1225-6463 |
| Popis: | We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. |
| Databáze: | OpenAIRE |
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