Investigation of electric and magnetic characteristics of high-temperature hall sensor based on AlGaN/GaN heterostructure

Autor:	Dao Dinh Ha, V. R. Stempitsky
Rok vydání:	2017
Předmět:	Materials science business.industry AlGaN/GaN heterostructures computer simulation high-temperature Hall sensor Optoelectronics Algan gan Hall effect sensor Heterojunction lcsh:Electrical engineering. Electronics. Nuclear engineering business lcsh:TK1-9971
Zdroj:	Tekhnologiya i Konstruirovanie v Elektronnoi Apparature, Iss 1-2, Pp 28-32 (2017)
ISSN:	2309-9992 2225-5818
Popis:	The paper presents research results on the characteristics of Hall sensor based on the AlGaN/GaN heterostructure with various geometric parameters of the active region operating in the temperature range from –25 to 400°C. The research was performed using device-technological simulation. The active layer of the proposed structure is a two-dimensional electron gas region, which is formed between the barrier layer Al0,3Ga0,7N and the undoped GaN channel layer. The results (room temperature current-related magnetic sensitivity 66.4 V/(A•T) and very low temperature cross sensitivity of 0,0273%/°C) indicate the prospects of the proposed solutions for the practical use.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81e95f4f9809e9bf1403d6b594ae386c https://doi.org/10.15222/tkea2017.1-2.28 Zobrazit plný text záznamu