| Autor: |
Seungmin Lee, Sanghyeon Lee, Minkyu Lee, Sung Min Rho, Hyung Tae Kim, Chihyeong Won, Kukro Yoon, Chaebeen Kwon, Juyoung Kim, Geun Chul Park, Jun Hyung Lim, Joon Seok Park, Woobin Kwon, Young-Bae Park, Dong won Chun, Hyun Jae Kim, Taeyoon Lee |
| Rok vydání: |
2022 |
| Předmět: |
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| Zdroj: |
ACS applied materialsinterfaces. |
| ISSN: |
1944-8252 |
| Popis: |
Controlling the contact properties of a copper (Cu) electrode is an important process for improving the performance of an amorphous indium-gallium-zinc oxide (a-IGZO) thin-film transistor (TFT) for high-speed applications, owing to the low resistance-capacitance product constant of Cu. One of the many challenges in Cu application to a-IGZO is inhibiting high diffusivity, which causes degradation in the performance of a-IGZO TFT by forming electron trap states. A self-assembled monolayer (SAM) can perfectly act as a Cu diffusion barrier (DB) and passivation layer that prevents moisture and oxygen, which can deteriorate the TFT on-off performance. However, traditional SAM materials have high contact resistance and low mechanical-adhesion properties. In this study, we demonstrate that tailoring the SAM using the chemical coupling method can enhance the electrical and mechanical properties of a-IGZO TFTs. The doping effects from the dipole moment of the tailored SAMs enhance the electrical properties of a-IGZO TFTs, resulting in a field-effect mobility of 13.87 cm |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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