Formation and Characterization of Hole Nanopattern on Photoresist Layer by Scanning Near-Field Optical Microscope
| Autor: | Marian Teodorczyk, Amrita Jain, A. Roszkiewicz, Wojciech Nasalski |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2019 |
| Předmět: |
Materials science
photoresist General Chemical Engineering Nanoprobe 02 engineering and technology Photoresist Zone plate 010402 general chemistry 01 natural sciences Article law.invention lcsh:Chemistry law Phase (matter) hole nanopatterning General Materials Science optical lithography Laser power scaling business.industry 021001 nanoscience & nanotechnology Laser quartz 0104 chemical sciences lcsh:QD1-999 Optoelectronics Photolithography 0210 nano-technology business Layer (electronics) |
| Zdroj: | Nanomaterials, Vol 9, Iss 10, p 1452 (2019) Nanomaterials Volume 9 Issue 10 |
| ISSN: | 2079-4991 |
| Popis: | Patterning of lines of holes on a layer of positive photoresist SX AR-P 3500/6 (Allresist GmbH, Strausberg, Germany) spin-coated on a quartz substrate is carried out by using scanning near-field optical lithography. A green 532 nm-wavelength laser, focused on a backside of a nanoprobe of 90 nm diameter, is used as a light source. As a result, after optimization of parameters like laser power, exposure time, or sleep time, it is confirmed that it is possible to obtain a uniform nanopattern structure in the photoresist layer. In addition, the lines of holes are characterized by a uniform depth (71&ndash 87 nm) and relatively high aspect ratio ranging from 0.22 to 0.26. Numerical modelling performed with a rigorous method shows that such a structure can be potentially used as a phase zone plate. |
| Databáze: | OpenAIRE |
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