Hydrogen Doping Oxide Transistors: Analysis of Ultrahigh Apparent Mobility in Oxide Field‐Effect Transistors (Adv. Sci. 7/2019)

Autor:	Yong-Young Noh, Bolong Huang, Changdong Chen, Hang Zhou, Shengdong Zhang, Qian Wu, Henning Sirringhaus, Bo-Ru Yang, Shaozhi Deng, Takeo Minari, Runze Zhan, Chuan Liu, Gongtan Li
Rok vydání:	2019
Předmět:	Electron mobility Materials science Hydrogen General Chemical Engineering Oxide General Physics and Astronomy Medicine (miscellaneous) chemistry.chemical_element doping Biochemistry Genetics and Molecular Biology (miscellaneous) law.invention chemistry.chemical_compound law thin‐film transistors General Materials Science carrier mobility business.industry Doping Transistor General Engineering Frontispiece chemistry Thin-film transistor surface potential scanning Optoelectronics four‐probe measurement Field-effect transistor business
Zdroj:	Advanced Science
ISSN:	2198-3844
Popis:	In article number 1801189, Chuan Liu and co‐workers present hydrogen doped IGZO thin‐film transistors induced by simple SINX encapsulation which exhibits substantially enhanced current and stability. Combing photoelectron spectroscopy, potential mapping and simulation, the nonuniform carrier distribution is revealed as the cause for the ultra‐high current and apparent device mobility, which is 40 times higher than the carrier mobility.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::81937a5ca1598b27080a611216ac77f0 https://doi.org/10.1002/advs.201970040 Zobrazit plný text záznamu Plný text