He implantation induced defects in InN
| Autor: | Filip Tuomisto, James S. Speck, Christian Rauch, F. Linez, Jyrki Räisänen, Lukasz Kilanski, S Choi, M Ritt |
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| Přispěvatelé: | Department of Applied Physics, Aalto-yliopisto, Aalto University, Department of Physics |
| Jazyk: | angličtina |
| Rok vydání: | 2014 |
| Předmět: |
010302 applied physics
History Materials science irradiation InN chemistry.chemical_element Nanotechnology 02 engineering and technology vacancy 021001 nanoscience & nanotechnology 01 natural sciences Fluence 114 Physical sciences Computer Science Applications Education Positron annihilation spectroscopy Positron chemistry Vacancy defect 0103 physical sciences positron Irradiation Atomic physics 0210 nano-technology Helium |
| Popis: | InN layers have been implanted with helium at 158 keV at various fluences to study the nature of the generated defects. The defects have been probed using positron annihilation spectroscopy. The first measurements showed that at least two different kinds of defects are created depending of the implantation fluence. The second measurements performed two years later gave different results suggesting that at least one of these defects is not stable at room temperature. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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