Field-effect transistors comprising molecular beam deposited α,ω-di-hexyl-hexathienylene and polymeric insulator
| Autor: | Teresita Ordonez Graham, Bruce K. Furman, Christos D. Dimitrakopoulos, Sampath Purushothaman, Suryanarayan G. Hegde |
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| Rok vydání: | 1998 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Transistor Metals and Alloys Analytical chemistry Insulator (electricity) Condensed Matter Physics Electronic Optical and Magnetic Materials law.invention Semiconductor Vacuum deposition Mechanics of Materials law Thin-film transistor Materials Chemistry Field-effect transistor business Molecular beam Polyimide |
| Zdroj: | Scopus-Elsevier |
| ISSN: | 0379-6779 |
| DOI: | 10.1016/s0379-6779(98)80021-0 |
| Popis: | Insulated-gate field-effect transistors (IGFETs) comprising molecular beam deposited α,ω-di-hexyl-hexathienylene (DH6T) as the semiconductor layer and different polymeric gate insulators were fabricated and tested. Field-effect mobility values up to 0.13 cm 2 V −1 s −1 were obtained, which are the highest values obtained from thin-film transistors of DH6T. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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