Characterization and structural analysis of RF magnetron sputtered strontium stannate thin films
| Autor: | Yusmar Palapa Wijaya, Khairul Anuar Mohamad, Afishah Alias, Abu Bakar Abdul Rahman, Mohammad Syahmi Nordin |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
SrSnO3
RF magnetron sputtering Argon Materials science Stannate Analytical chemistry chemistry.chemical_element Strontium Stannate Thin Film Sputter deposition Perovskite Lattice constant chemistry Cavity magnetron Orthorhombic crystal system Electrical and Electronic Engineering Thin film Perovskite (structure) |
| Zdroj: | TELKOMNIKA (Telecommunication Computing Electronics and Control). 19:1349 |
| ISSN: | 2302-9293 1693-6930 |
| DOI: | 10.12928/telkomnika.v19i4.18790 |
| Popis: | This paper presents physical and morphology properties of strontium stannate (SrSnO 3 ) perovskite-type as a candidate of an n-type material thin film for organic-inorganic hybrid diode heterojunction for optoelectronics application. Typical wet-process of SrSnO 3 deposition produce thick film and having 10 -8 S/cm order in conductivity. The SrSnO 3 thin films were deposited on ITO glass substrates by RF magnetron sputtering using a purity 99.9% SrSnO 3 target with 5.0 mTorr of gas pressure and 100 W of RF power at room temperature. The gas composition of pure argon (75%) and reactive oxygen gas (25%) was used for 60 min. XRD diffraction patterns revealed that the thin films are orthorhombic crystal structure with lattice parameter a=5.7040 Ǻ, b=8.06 Ǻ and c=5.7080 Ǻ with a strong orientation in the (002) direction. SEM images showed that films exhibited uniform surface morphology with a roughness average of R a =2.258 nm and thickness of 311 nm. The EDX spectrum confirmed the presence of O, Sr, and Sn elements in the films with 75.22%, 8.29%, 16.49% in atomic number, respectively. The films were having a conductivity of 8.33x 10 2 S/cm with low resistivity of 12.4x 10 -3 W -cm. |
| Databáze: | OpenAIRE |
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