Al catalyzed growth of silicon nanowires and subsequent in situ dry etching of the catalyst for photovoltaic application

Autor: Arnaud Brioude, Sébastien Noël, Cyril Cayron, Christine Morin, Simon Perraud, Pascal Faucherand, Vasiliki Tileli, Joel Dufourcq, David Kohen, Michel Levis
Přispěvatelé: Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux (LITEN), Institut National de L'Energie Solaire (INES), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Centre National de la Recherche Scientifique (CNRS), Thermoelectricity Laboratory (CEA, LITEN), Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Unité de Catalyse et Chimie du Solide - UMR 8181 (UCCS), Université d'Artois (UA)-Centrale Lille-Institut de Chimie du CNRS (INC)-Université de Lille-Centre National de la Recherche Scientifique (CNRS), Laboratoire des Multimatériaux et Interfaces (LMI), Université Claude Bernard Lyon 1 (UCBL), Université de Lyon-Université de Lyon-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS), Laboratoire de photonique et de nanostructures (LPN), Centre National de la Recherche Scientifique (CNRS), Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Centre National de la Recherche Scientifique (CNRS)-Université Savoie Mont Blanc (USMB [Université de Savoie] [Université de Chambéry])-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Centrale Lille Institut (CLIL)-Université d'Artois (UA)-Centrale Lille-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie du CNRS (INC)-Université de Lille
Jazyk: angličtina
Rok vydání: 2011
Předmět:
Semiconducting silicon compounds
In-vacuum
Analytical chemistry
HCl gas
High resolution transmission electron microscopy
02 engineering and technology
Chemical vapor deposition
01 natural sciences
7. Clean energy
[SPI.MAT]Engineering Sciences [physics]/Materials
Silicon nanowires
Etching (microfabrication)
Fabrication process
Materials Chemistry
Al catalyst
ComputingMilieux_MISCELLANEOUS
Visible light
010302 applied physics
Plasma etching
Total reflectance
Catalysts
Energy dispersive X ray spectroscopy
In-situ
Surfaces and Interfaces
Aluminum etching
[CHIM.MATE]Chemical Sciences/Material chemistry
021001 nanoscience & nanotechnology
Condensed Matter Physics
CVD
Surfaces
Coatings and Films
Electronic
Optical and Magnetic Materials
[PHYS.COND.CM-MS]Physics [physics]/Condensed Matter [cond-mat]/Materials Science [cond-mat.mtrl-sci]
0210 nano-technology
Materials science
Dry etching
High resolution electron microscopy
Energy-dispersive X-ray spectroscopy
[CHIM.INOR]Chemical Sciences/Inorganic chemistry
Catalysis
Silicon wafers
VLS
0103 physical sciences
Epitaxial growth
Wafer
Electrical and Electronic Engineering
Reactive-ion etching
catalyst dry etching
[SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics
High-resolution transmission electron microscopy
Si wafer
Nanowires
X ray spectroscopy
Controlled growth
Chemical engineering
Aluminum coatings
Photovoltaic applications
Transmission electron microscopy
Aluminum
Zdroj: physica status solidi (a)
physica status solidi (a), 2011, 208 (11), pp.2676-2680. ⟨10.1002/pssa.201127072⟩
physica status solidi (a), Wiley, 2011, 208 (11), pp.2676-2680. ⟨10.1002/pssa.201127072⟩
ISSN: 0031-8965
1862-6319
DOI: 10.1002/pssa.201127072⟩
Popis: Aluminum-catalyzed epitaxial growth of silicon nanowire (SiNW) arrays was performed on Si wafer by chemical vapor deposition at 600°C. The arrays showed a low optical total reflectance in the visible light spectrum, with a minimum of 2% around 450nm wavelength. Following SiNW growth, dry etching of the Al catalyst was performed in situ using HCl chemistry at 600°C. The effectiveness of aluminum etching was assessed by energy dispersive X-ray spectroscopy, by high resolution transmission electron microscopy and by a controlled growth experiment. This SiNW array growth and subsequent catalyst dry etching opens up the possibility of an all in vacuum fabrication process of radial junction solar cells. Al catalyst dry etching following growth using HCl gas at 600°C. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Databáze: OpenAIRE
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