Iron Silicide Root Formation in Carbon Nanotubes Grown by Microwave PECVD
Autor: | Chiara Daraio, and Andrew I. Gapin, Sungho Jin, Li-Han Chen, Joseph F. Aubuchon |
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Rok vydání: | 2005 |
Předmět: |
inorganic chemicals
Materials science Silicon Carbon nanofiber chemistry.chemical_element Nanotechnology Substrate (electronics) Carbon nanotube Chemical vapor deposition Surfaces Coatings and Films law.invention Condensed Matter::Materials Science chemistry.chemical_compound chemistry law Plasma-enhanced chemical vapor deposition Silicide Materials Chemistry Carbon nanotube supported catalyst Physical and Theoretical Chemistry |
Zdroj: | The Journal of Physical Chemistry B. 109:24215-24219 |
ISSN: | 1520-5207 1520-6106 |
DOI: | 10.1021/jp0558627 |
Popis: | Aligned carbon nanotubes have been grown using microwave plasma enhanced chemical vapor deposition (PECVD). The carbon nanotubes are nucleated from iron catalyst particles which, during growth, remain adherent to the silicon substrates. By analysis with high-resolution electron microscopy, we observe iron silicide roots penetrating into the silicon substrate at the interface of the catalyst particles and the substrate, thus providing strong adhesion of the carbon nanotubes onto the substrate. The iron silicide roots assist in the attachment of the catalyst particles to the substrate and play a role in the evolution of the catalyst particle morphology and resulting base growth mode. Carbon nanotubes grown by microwave PECVD could exhibit superior electrical and thermal transport properties over other PECVD processes, so an understanding of the growth mechanism is important for utilization in device applications. |
Databáze: | OpenAIRE |
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