Crystal structure induced residue formation on 4H-SiC by reactive ion etching
| Autor: | Zhi-zhan Chen, Sun Yujun, Liao Liming, Zhao Gaojie, Liu Yihong, Tao Wang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Scanning electron microscope Atomic force microscopy Chemistry fungi Analytical chemistry technology industry and agriculture General Physics and Astronomy 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology 01 natural sciences Work pressure lcsh:QC1-999 O2 plasma Residue (chemistry) stomatognathic system 0103 physical sciences Wafer Reactive-ion etching 0210 nano-technology lcsh:Physics |
| Zdroj: | AIP Advances, Vol 6, Iss 6, Pp 065219-065219-9 (2016) |
| ISSN: | 2158-3226 |
| Popis: | The (000 1 ¯ ) C face of 4H-SiC wafer was etched by reactive ion etching in SF6/O2 plasma. The effect of etching parameters, such as work pressure, SF6:O2 ratio and etching time, on the residue formation were systematically investigated. The residue morphologies were observed by scanning electron microscopy and atomic force microscopy, respectively. The residues have spike shape and their facets are defined as { 1 1 ¯ 0 2 ¯ } crystal planes. They are formed at beginning of the etching and no new spikes are generated as prolonging etching time. Both work pressure and SF6:O2 ratio play significant role in the spike formation. The residues can be eliminated completely by increasing the SF6:O2 ratio and work pressure. On the basis of experimental results and of 4H-SiC crystal structure, the spike formation model is proposed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|