Identification of GaN Buffer Traps in Microwave Power AlGaN/GaN HEMTs Through Low Frequency S-Parameters Measurements and TCAD-Based Physical Device Simulations
| Autor: | Jean-Christophe Nallatamby, Julien Couvidat, Raymond Quéré, Raphaël Sommet, Ahmad Al Hajjar, Nandha Kumar Subramani |
|---|---|
| Přispěvatelé: | Systèmes RF (XLIM-SRF), XLIM (XLIM), Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS)-Université de Limoges (UNILIM)-Centre National de la Recherche Scientifique (CNRS) |
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Admittance Gallium nitride 02 engineering and technology Activation energy Low frequency Type (model theory) 01 natural sciences chemistry.chemical_compound 0103 physical sciences Dispersion (optics) 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering 010302 applied physics Gallium-nitride (GaN) business.industry low frequency S-parameters Order (ring theory) 020206 networking & telecommunications TCAD simulation [SPI.TRON]Engineering Sciences [physics]/Electronics Electronic Optical and Magnetic Materials chemistry high electron mobility transistor (HEMT) Optoelectronics lcsh:Electrical engineering. Electronics. Nuclear engineering Atomic physics business lcsh:TK1-9971 Energy (signal processing) buffer traps Biotechnology |
| Zdroj: | IEEE Journal of the Electron Devices Society, Vol 5, Iss 3, Pp 175-181 (2017) IEEE Journal of the Electron Devices Society IEEE Journal of the Electron Devices Society, IEEE Electron Devices Society, 2017, 5 (3), pp.175-181. ⟨10.1109/JEDS.2017.2672685⟩ |
| ISSN: | 2168-6734 |
| DOI: | 10.1109/jeds.2017.2672685 |
| Popis: | In this paper, the type, activation energy ( $\textit{E}_{a}$ ) and cross section ( ${\sigma }_{n}$ ) of the GaN buffer traps existing in the AlGaN/GaN high-electron mobility transistors are investigated through low frequency (LF) S-parameters measurements. Furthermore, we present the 2-D physics based TCAD numerical simulation analysis of this device. The dc simulation results are calibrated to match with the experimentally measured I–V characteristics and this allows to qualitatively estimate the concentration of traps ( $\textit{N}_{T}$ ) present in the GaN buffer. Knowing the measured trap energy level and the estimated trap concentration $\textit{N}_{T}$ , TCAD physical simulations are performed at various temperatures in order to extract the LF- $\textit{Y}_{22}$ admittance parameter. Interestingly, the LF- $\textit{Y}_{22}$ simulation results are found to be in good agreement with the measurements and this result strongly suggests that LF admittance dispersion is an effective tool in identifying the traps present in the GaN buffer. Moreover, this paper reveals that acceptor-like traps with an apparent concentration of $5.0\times 10^{16}$ cm $^{-3}$ and with the apparent trap energy level of 0.4 eV below the conduction band are located in the GaN buffer. |
| Databáze: | OpenAIRE |
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