Epitaxy of Group-IV Semiconductors for Quantum Electronics

Autor: Jean-Michel Hartmann, Nicolas Bernier, Francois Pierre, Jean-Paul Barnes, Vincent Mazzocchi, Julia Krawczyk, Gabriel Lima, Elyjah Kiyooka, Silvano De Franceschi
Přispěvatelé: Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information (CEA-LETI), Direction de Recherche Technologique (CEA) (DRT (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Laboratoire de Transport Electronique Quantique et Supraconductivité (LaTEQS), PHotonique, ELectronique et Ingénierie QuantiqueS (PHELIQS), Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA)
Jazyk: angličtina
Rok vydání: 2023
Předmět:
Zdroj: ECS Transactions
ECS Transactions, 2023, 111 (1), pp.53-72. ⟨10.1149/11101.0053ecst⟩
ISSN: 1938-5862
1938-6737
DOI: 10.1149/11101.0053ecst⟩
Popis: We are growing at CEA (i) high purity 28Si layers and (ii) c-Ge/SiGe heterostructures for electron and hole spin quantum bits. We describe here strategies usable for the fabrication of 28SOI substrates, with a focus on 28SiH4 consumption minimization, as such a gas is very expensive and hard to come by. We also focus on the properties of Si0.26Ge0.74 and Si0.21Ge0.79 Virtual Substrates (VS) grown at 850°C, 20 Torr and a forward Ge ramping-up on Si(001) substrates. After some chemical polishing (to remove the surface cross-hatch), those VS are used as templates for the 500°C, 100 Torr growth of SiGe/c-Ge/SiGe 2D Hole Gas Gas (2DHG) stacks. Those c-Ge layers are, in X-Ray Diffraction, fully compressively strained on the relaxed SiGe VS underneath and of high crystalline quality. Some slight undulations are evidenced at c-Ge / SiGe cap interfaces, hinting at elastic strain relaxation, however. Magnetotransport measurements in Hall-bar devices were performed at 4.2 K to assess the electrical properties of the 2DHG in those SiGe/c-Ge heterostructures. At low magnetic field, a hole mobility of 1.2 x 105 cm2 V-1 s-1 was obtained for a hole density of n2DHG = 3.7x1011 cm-2 in a 16 nm thick c-Ge/55 nm thick Si0.21Ge0.79 cap sample.
Databáze: OpenAIRE
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