Models for the self-heating evaluation of a gallium nitride-based high electron mobility transistor
| Autor: | M Florovič, J Kováč, A Chvála, M Weis, J-C Jacquet, S L Delage |
|---|---|
| Rok vydání: | 2021 |
| Předmět: |
010302 applied physics
Materials science business.industry Thermal resistance Gallium nitride 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology Condensed Matter Physics 7. Clean energy 01 natural sciences Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry 0103 physical sciences Materials Chemistry Optoelectronics Field-effect transistor Electrical and Electronic Engineering 0210 nano-technology business |
| Zdroj: | Semiconductor Science and Technology |
| ISSN: | 1361-6641 0268-1242 1674-1056 |
| DOI: | 10.1088/1361-6641/abd15a |
| Popis: | We propose a novel model approach for temperature evaluation in the channel region of a InAlN/AlN/gallium nitride high electron mobility transistor (HEMT) due to self-heating effects. The heat transfer in a HEMT device has been investigated experimentally by the nearby temperature sensor and compared by theoretical models solved by both numerical and analytical methods. The average temperature of the channel area of almost 160 °C for dissipated power of 2 W was determined using the drain-source current variation analysis. The electrical and thermal behavioral numerical model under quasi-static conditions have been used to describe the HEMT device. In contrast, the one-dimensional thermal model for analytical evaluation has been proposed as an alternative approach. Surprisingly, the experimental results verified not only the validity of precise numerical simulation but also the simplified analytical model that makes it a reliable tool even for complex electronic devices. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|