Impact of repetitive UIS on modern GaN power devices
| Autor: | Martin Donoval, Patrik Pribytny, Juraj Marek, Daniel Donoval, Ales Chvala, Lubica Stuchlikova, Martin Jagelka |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science business.industry 020208 electrical & electronic engineering Electrical engineering 02 engineering and technology 01 natural sciences 7. Clean energy Power (physics) 13. Climate action 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Electrical performance Optoelectronics Power semiconductor device business |
| Zdroj: | 2016 11th International Conference on Advanced Semiconductor Devices & Microsystems (ASDAM) |
| DOI: | 10.1109/ASDAM.2016.7805923 |
| Popis: | In this paper we present the results from repetitive Unclmped Inductive Switching — UIS measurements on power GaN HEMTs. Experimental analysis was performed on two types of power devices — normally ON and OFF HEMTs. UIS test was used to simulate real switching conditions in which power device has to operate. Analysis has shown that charge trapping effects on interfaces and in bulk layer have strong impact on electrical performance of devices. DLTS study was performed on virgin and short and long stressed sample for better understanding of trapping effects. |
| Databáze: | OpenAIRE |
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