Ferroelectric HfZrOx FETs on SOI Substrate With Reverse-DIBL (Drain-Induced Barrier Lowering) and NDR (Negative Differential Resistance)

Autor:	H.-Y. Chen, C.-Y. Liao, Ming-Han Liao, Shu-Tong Chang, Zheng-Ying Wang, Yu-Chen Chou, Ruo-Chun Hong, Min-Hung Lee, C. Lo, Pin-Guang Chen, Siang-Sheng Gu, Shih-Yao Chen, Kai-Shin Li, Kuan-Ting Chen, Gao-Yu Siang
Jazyk:	angličtina
Rok vydání:	2018
Předmět:	Materials science Silicon Annealing (metallurgy) Silicon on insulator chemistry.chemical_element Drain-induced barrier lowering 02 engineering and technology 01 natural sciences Capacitance 0103 physical sciences Electrical and Electronic Engineering 010302 applied physics Subthreshold conduction business.industry 021001 nanoscience & nanotechnology Ferroelectricity Electronic Optical and Magnetic Materials chemistry Optoelectronics Field-effect transistor lcsh:Electrical engineering. Electronics. Nuclear engineering 0210 nano-technology business negative differential resistance lcsh:TK1-9971 Biotechnology Ferroelectric
Zdroj:	IEEE Journal of the Electron Devices Society, Vol 6, Pp 900-904 (2018)
ISSN:	2168-6734
Popis:	Ferroelectric-Hf1-xZrxO2 FETs on silicon on insulator (SOI) are modeled and demonstrated with improvement on subthreshold swing (SS) and hysteresis (VT-shift), which is based on the capacitance matching concept. The minimum reverse SS = 45 mV/dec and 52 mV/dec are obtained experimentally for SOI and bulk-Si, respectively. The steep SS range (
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8003e310c78d3208cac7654f7280a3f5 https://ieeexplore.ieee.org/document/8425629/ Zobrazit plný text záznamu