Efficient Charge Separation in 2D Janus van der Waals Structures with Built-in Electric Fields and Intrinsic p–n Doping

Autor: Mohnish Pandey, Kristian Sommer Thygesen, Anders C. Riis-Jensen
Rok vydání: 2018
Předmět:
Zdroj: Riis-Jensen, A C, Pandey, M & Thygesen, K S 2018, ' Efficient Charge Separation in 2D Janus van der Waals Structures with Built-in Electric Fields and Intrinsic p-n Doping ', Journal of Physical Chemistry C, vol. 122, no. 43, pp. 24520-24526 . https://doi.org/10.1021/acs.jpcc.8b05792
The Journal of Physical Chemistry C
ISSN: 1932-7455
1932-7447
Popis: Janus MoSSe monolayers were recently synthesised by replacing S by Se on one side of MoS$_2$ (or vice versa for MoSe$_2$). Due to the different electronegativity of S and Se these structures carry a finite out-of-plane dipole moment. As we show here by means of density functional theory (DFT) calculations, this intrinsic dipole leads to the formation of built-in electric fields when the monolayers are stacked to form $N$-layer structures. For sufficiently thin structures ($N4$. Based on band structure calculations and the Mott-Wannier exciton model, we compute the energies of intra- and interlayer excitons as a function of film thickness suggesting that the Janus multilayer films are ideally suited for achieving ultrafast charge separation over atomic length scales without chemical doping or applied electric fields. Finally, we explore a number of other potentially synthesisable 2D Janus structures with different band gaps and internal dipole moments. Our results open new opportunities for ultrathin opto-electronic components such as tunnel diodes, photo-detectors, or solar cells.
Databáze: OpenAIRE