Silicon Process Impact on 5G NR mmWave Front End Design and Performance

Autor:	Ming-Ta Yang, P. Chidambaram, Jeremy D. Dunworth, Joseph Wang, Kamal Sahota, Haitao Cheng, Gang Liu, Sriram Kalpat, Wing Sy, Chuan-Cheng Cheng
Rok vydání:	2019
Předmět:	Front and back ends Computer science Circuit design Extremely high frequency Latency (audio) Electronic engineering Multi-band device Integrated circuit design Antenna (radio) Transceiver
Zdroj:	VLSI-DAT
Popis:	5G NR (New Radio) standard allows utilization of higher frequency spectrum into millimeter wave (mmWave) bands (24GHz to 71GHz and above) to support wider modulated signal bandwidths from 100MHz to more than 2GHz, higher data rate communication, and lower latency. RF chip design in mmWave frequency to support 5G NR has been realized to overcome many challenges in system integration, circuit design, process technology, and reliability. In this paper, we review the impact of Silicon process performance on mmWave front end transceiver solutions. A dual band (28GHz, 39GHz), multi-element transceiver SOC has been successfully integrated with antenna module and is ready for commercialization in 2019. [1]
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7ff3674b29c0499bad0891b2d23d26a1 https://doi.org/10.1109/vlsi-tsa.2019.8804709 Zobrazit plný text záznamu