Measuring the Edge Recombination Velocity of Monolayer Semiconductors
| Autor: | Matin Amani, Der Hsien Lien, Ali Javey, Daryl C. Chrzan, Peida Zhao, James P. Mastandrea, Joel W. Ager, Geun Ho Ahn, Daisuke Kiriya, Eli Yablonovitch |
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| Rok vydání: | 2017 |
| Předmět: |
Materials science
Passivation business.industry Mechanical Engineering Quantum yield Bioengineering 02 engineering and technology General Chemistry Carrier lifetime Edge (geometry) 010402 general chemistry 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences 0104 chemical sciences Characterization (materials science) Semiconductor Monolayer Optoelectronics General Materials Science Atomic physics 0210 nano-technology business Recombination |
| Zdroj: | Nano letters. 17(9) |
| ISSN: | 1530-6992 |
| Popis: | Understanding edge effects and quantifying their impact on the carrier properties of two-dimensional (2D) semiconductors is an essential step toward utilizing these materials for high performance electronic and optoelectronic devices.1–5 WS 2 monolayers patterned into disks of varying diameters are used to experimentally determine the influence of edges on their optical properties. Carrier lifetime measurements show a decrease in the effective lifetime, τ effective , as a function of decreasing diameter, suggesting that the edges are active sites for carrier recombination. Accordingly, we introduce a metric called edge recombination velocity (ERV) to characterize the impact of 2D material edges on non-radiative recombination. The unpassivated WS 2 monolayer disks yield an ERV ∼ 4 × 104 cm/s. This work quantifies the non-radiative recombination edge effects in monolayer semiconductors, while simultaneously establishing a practical characterization technique towards experimental explorations of edge passivation methods for 2D materials. |
| Databáze: | OpenAIRE |
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