Intrinsic Frequency Response of Silicon–Germanium Phototransistor Associated With 850-nm Multimode Fiber
| Autor: | Jean-Luc Polleux, Zerihun Gedeb Tegegne, Carlos Viana, Marjorie Grzeskowiak, Elodie Richalot |
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| Přispěvatelé: | Conservatoire National des Arts et Métiers - CNAM (FRANCE), Ecole de l'Innovation Technologique - ESIEE PARIS (FRANCE), Université Paris-Est Marne-La-Vallée - UPEM (FRANCE), Electronique, Systèmes de communication et Microsystèmes (ESYCOM), Conservatoire National des Arts et Métiers [CNAM] (CNAM), HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-HESAM Université - Communauté d'universités et d'établissements Hautes écoles Sorbonne Arts et métiers université (HESAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Conservatoire National des Arts et Métiers [CNAM] (CNAM)-Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris, Université Paris-Est Marne-la-Vallée (UPEM)-ESIEE Paris-Conservatoire National des Arts et Métiers [CNAM] (CNAM) |
| Rok vydání: | 2018 |
| Předmět: |
Materials science
Microwavephotonics 02 engineering and technology Substrate (electronics) microwave- photonics law.invention chemistry.chemical_compound 020210 optoelectronics & photonics Optical microscope law 0202 electrical engineering electronic engineering information engineering Electrical and Electronic Engineering Photocurrent Multi-mode optical fiber Substrate effect business.industry Silicon-based photodetectors Photoconductivity 020208 electrical & electronic engineering Optique / photonique Heterojunction SiGe phototransistor Electronic Optical and Magnetic Materials Photodiode Silicon-germanium [SPI.ELEC]Engineering Sciences [physics]/Electromagnetism chemistry [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic Optoelectronics OM-SNOM business |
| Zdroj: | IEEE Transactions on Electron Devices IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 2018, 65 (6), pp.2537-2543. ⟨10.1109/TED.2018.2828166⟩ |
| ISSN: | 1557-9646 0018-9383 |
| DOI: | 10.1109/ted.2018.2828166 |
| Popis: | The intrinsic frequency response of silicon–germanium heterojunction bipolar phototransistors (HPTs) at 850 nm is studied to be implemented in multimode fiber systems. The experimental analysis of an HPT with an optical window size of $\textsf {10} \times \textsf {10}\,\,\mu \text{m}^{\textsf {2}}$ is presented. An opto-microwave (OM) scanning near-field optical microscopy is performed to observe the variation of the HPT dynamic behavior versus the illumination location of the phototransistor. The photocurrent generated by the photodiode at the interface between the n++ subcollector and the p+ guard ring is analyzed, and its impact on the performance of the HPT is investigated. Then, we propose a technique to remove the substrate photocurrent effect on the optical transition frequency ( ${f}_{\textsf {Topt}}$ ): ${f}_{\textsf {Topt}}$ value of 4.1 GHz given by raw measurement results increases up to 6 GHz after removing the substrate response. The influence of the 2-D carrier flows on the HPT intrinsic OM behavior is also studied. Design aspects of SiGe/Si HPT structures are finally discussed as a conclusion. |
| Databáze: | OpenAIRE |
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