Analysis, Synthesis and Characterization of Thin Films of a-Si:H (n-type and p-type) Deposited by PECVD for Solar Cell Applications
Autor: | Alberto Cuevas-Salgado, María Silvia Garcia-Monterrosas, A. Garcia-Barrientos, A. Medina-Flores, Jose Luis Bernal-Ponce, A. Torres-Jacome, J. Plaza-Castillo |
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Rok vydání: | 2021 |
Předmět: |
Technology
Materials science Silicon Band gap PECVD Analytical chemistry a-Si:H chemistry.chemical_element Article law.invention chemistry.chemical_compound Plasma-enhanced chemical vapor deposition law Ellipsometry Solar cell General Materials Science Thin film Microscopy QC120-168.85 Dopant QH201-278.5 Engineering (General). Civil engineering (General) Silane TK1-9971 chemistry Descriptive and experimental mechanics solar cells Electrical engineering. Electronics. Nuclear engineering TA1-2040 |
Zdroj: | Materials Volume 14 Issue 21 Materials, Vol 14, Iss 6349, p 6349 (2021) |
ISSN: | 1996-1944 |
Popis: | In this paper, the analysis, synthesis and characterization of thin films of a-Si:H deposited by PECVD were carried out. Three types of films were deposited: In the first series (00 process), an intrinsic a-Si:H film was doped. In the second series (A1–A5 process), n-type samples were doped, and to carry this out, a gas mixture of silane (SiH4), dihydrogen (H2) and phosphine (PH3) was used. In the third series (B1–B5 process), p-type samples were doped using a mixture of silane (SiH4), dihydrogen (H2) and diborane (B2H6). The films’ surface morphology was characterized by atomic force microscopy (AFM), while the analysis of the films was performed by scanning electron microscopy (SEM), and UV–visible ellipsometry was used to obtain the optical band gap and film thickness. According to the results of the present study, it can be concluded that the best conditions can be obtained when the flow of dopant gases (phosphine or diborane) increases, as seen in the conductivity graphs, where the films with the highest flow of dopant gas reached the highest conductivities compared to the minimum required for materials made of a-Si:H silicon for high-quality solar cells. It can be concluded from the results that the magnitude of the conductivity, which increased by several orders, represents an important result, since we could improve the efficiency of solar cells based on a-Si:H. |
Databáze: | OpenAIRE |
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