Optimized Power Modules for Silicon Carbide MOSFET

Autor: Guillaume Regnat, Pierre-Olivier Jeannin, David Frey, Stefan Mollov, Jeffrey Ewanchuk, Jean-Paul Ferrieux
Přispěvatelé: Laboratoire de Génie Electrique de Grenoble (G2ELab), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Mitsubishi Electric R&D Centre Europe [France] (MERCE-France), Mitsubishi Electric [France], Garcia, Sylvie
Jazyk: angličtina
Rok vydání: 2018
Předmět:
Zdroj: IEEE Transactions on Industry Applications
IEEE Transactions on Industry Applications, Institute of Electrical and Electronics Engineers, 2018, 54 (2), pp.1634--1644. ⟨10.1109/TIA.2017.2784802⟩
Energy Conversion Congress & Exposition (ECCE 2016)
Energy Conversion Congress & Exposition (ECCE 2016), Sep 2016, Milwaukee, United States
ISSN: 0093-9994
DOI: 10.1109/TIA.2017.2784802⟩
Popis: An Integrated Power Board technology was used to construct a 3D power module. This packaging is suitable for use of WBG devices as it reduces the inductive parasitics to the strict minimum, with a 2nH loop inductance in our 1.2kV/80A SiC prototype using SiC MOSFETs. The packaging presents virtually no parasitics or necessity for slowing down the commutation, which is oscillation-free. The conducted emissions of the 3D module are more than halved in comparison to those of a bespoke wire-bonded, EMI-optimised module.
Databáze: OpenAIRE