Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions
| Autor: | Lis K. Nanver, Tihomir Knezevic, Tomislav Suligoj |
|---|---|
| Přispěvatelé: | Petar Biljanović |
| Jazyk: | angličtina |
| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Materials science Thin layers Silicon business.industry chemistry.chemical_element 02 engineering and technology 01 natural sciences interface barrier hole layer perimeter effects ultrashallow junctions 020210 optoelectronics & photonics chemistry 0103 physical sciences 0202 electrical engineering electronic engineering information engineering Optoelectronics Nanometre Electric potential Boron business Current density Ohmic contact Diode |
| Zdroj: | 2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings, 72-76 STARTPAGE=72;ENDPAGE=76;TITLE=2017 40th International Convention on Information and Communication Technology, Electronics and Microelectronics, MIPRO 2017-Proceedings MIPRO |
| Popis: | Interface states at metal-semiconductor or semiconductor-semiconductor interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions that are contacted by metal, can be beneficial for suppressing the injection of majority carriers from the bulk. The effect is more pronounced as the p+n junction depth becomes smaller and it dominates the electrical characteristics of ultrashallow junctions, as, for example sub-10-nm deep pure boron (PureB) diodes. The properties of the perimeter of such an interface play a critical role in the overall electrical characteristics. In this paper, a TCAD simulation study is described where nanometer-deep p+n junctions have an interface hole-layer that forms an energy barrier at the semiconductor-semiconductor interface. The suppression of bulk electron injection is analyzed with respect to the barrier height and the p+n junction depth. Perimeter effects are investigated by 2D simulations showing a detrimental impact on the parasitic majority carrier injection from the bulk in structures with nanometer deep p+n junctions. Other than employing a guard ring, reduction of the perimeter effects by shifting the position of the metal electrode was considered. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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