3D mapping of nanoscale electric potentials in semiconductor structures using electron-holographic tomography
| Autor: | Hannes Lichte, Axel Lubk, Daniel Wolf, Paola Prete, Nico Lovergine |
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| Přispěvatelé: | Wolf, D., Lubk, A., Prete, Paola, Lovergine, Nicola, Lichte, H. |
| Jazyk: | angličtina |
| Rok vydání: | 2016 |
| Předmět: |
Materials science
Acoustics and Ultrasonics CMOS device quantum well tube Nanowire Holography 02 engineering and technology Electron 01 natural sciences Electron holography law.invention Optics law 0103 physical sciences 3D reconstruction Quantum well 010302 applied physics business.industry Semiconductor device 021001 nanoscience & nanotechnology Condensed Matter Physics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor nanowires mean inner potential pn junction 0210 nano-technology business p–n junction 3D reconstruction nanowires CMOS device mean inner potential pn junction quantum well tube |
| Zdroj: | Journal of physics. D, Applied physics 49 (2016): 364004. doi:10.1088/0022-3727/49/36/364004 info:cnr-pdr/source/autori:Wolf D.; Lubk A.; Prete P.; Lovergine N.; Lichte H./titolo:3D mapping of nanoscale electric potentials in semiconductor structures using electron-holographic tomography/doi:10.1088%2F0022-3727%2F49%2F36%2F364004/rivista:Journal of physics. D, Applied physics (Print)/anno:2016/pagina_da:364004/pagina_a:/intervallo_pagine:364004/volume:49 |
| Popis: | Off-axis electron holography (EH) is a powerful method for mapping projected electric potentials, such as built-in potentials in semiconductor devices, in two dimensions (2D) at nanometer resolution. However, not well-defined thickness profiles, surface effects, and composition changes of the sample under investigation complicate the interpretation of the projected potentials. Here, we demonstrate how these problems can be overcome by combining EH with tomographic techniques, that is, electron holographic tomography (EHT), reconstructing electric potentials in 3D. We present EHT reconstructions of an n-type MOSFET including its dopant-related built-in potentials inside the device, as well as of a GaAs/AlGaAs core-multishell nanowire containing a 5 nm thick quantum well tube. |
| Databáze: | OpenAIRE |
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