Resistive and Spintronic RAMs: Device, Simulation, and Applications
| Autor: | Elena Ioana Vatajelu, Guillaume Prenat, Lorena Anghel, Jean-Michel Portal, Marc Bocquet |
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| Přispěvatelé: | Techniques de l'Informatique et de la Microélectronique pour l'Architecture des systèmes intégrés (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP )-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019]), Institut des Matériaux, de Microélectronique et des Nanosciences de Provence (IM2NP), Aix Marseille Université (AMU)-Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS), SPINtronique et TEchnologie des Composants (SPINTEC), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes [2016-2019] (UGA [2016-2019])-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Direction de Recherche Fondamentale (CEA) (DRF (CEA)), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA), Politecnico di Torino [Torino] (Polito), Techniques of Informatics and Microelectronics for integrated systems Architecture (TIMA), Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP)-Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA), Centre d'Enseignement et de Recherche en Environnement Atmosphérique (CEREA), École des Ponts ParisTech (ENPC)-EDF R&D (EDF R&D), EDF (EDF)-EDF (EDF), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Centre National de la Recherche Scientifique (CNRS)-Université Grenoble Alpes (UGA)-Institut polytechnique de Grenoble - Grenoble Institute of Technology (Grenoble INP ), Université Grenoble Alpes (UGA), Université de Toulon (UTLN)-Centre National de la Recherche Scientifique (CNRS)-Aix Marseille Université (AMU), Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche Interdisciplinaire de Grenoble (IRIG), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Université Grenoble Alpes (UGA) |
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Random access memory Resistive touchscreen reliability STTMRAM 02 engineering and technology neuromorphic computing 01 natural sciences 020202 computer hardware & architecture Non-volatile memory non-volatile RAM OxRAM Neuromorphic engineering CMOS Computer architecture in-memory computing 0103 physical sciences 0202 electrical engineering electronic engineering information engineering [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Device simulation ComputingMilieux_MISCELLANEOUS Efficient energy use Electronic circuit |
| Zdroj: | IOLTS 2018 IEEE 24th International Symposium on Testing And Robust System Design (IOLTS) IOLTS 2018-IEEE 24th International Symposium on Testing And Robust System Design Testing And Robust System Design, Jul 2018, Platja d'Aro, Spain. pp.109-114, ⟨10.1109/IOLTS.2018.8474226⟩ Testing And Robust System Design (IOLTS), Jul 2018, Platja d'Aro, Spain |
| DOI: | 10.1109/iolts.2018.8474226 |
| Popis: | International audience; The emergence of non-volatile random access memory technologies, such as resistive and spintronic RAMs are triggering intense interdisciplinary activity. These technologies have the potential of providing many benefits, such as energy efficiency, high integration density, CMOS-compatibility, re-configurability, non-volatility and open the path towards novel computational structures and approaches, for the traditional Von-Neumann architectures and beyond. These promising characteristics, coupled with the ever-increasing limitations faced by traditional CMOS-based storage and computational structures, have driven the research community towards completely revisiting the existing computing and storage paradigms, now focusing on providing hardware solutions for in-memory and neuromorphic computing. This has resulted in an intensified research activity in the device physics, striving to achieve circuit-worth devices, reliable compact models and novel architectures. The purpose of this paper is to provide a comprehensive overview of the device physics, issues related to its use in electronic circuits, methodologies for their compact modelling and simulations, and their integration in storage and computational structures. |
| Databáze: | OpenAIRE |
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