Kirchhoff and electron curvature indexes for SiC nanoclusters
| Autor: | Anatoliy V. Luzanov |
|---|---|
| Rok vydání: | 2017 |
| Předmět: |
Materials science
Condensed matter physics Modeling and simulation 02 engineering and technology Electron 021001 nanoscience & nanotechnology Curvature 01 natural sciences Nanoclusters Condensed Matter::Materials Science Quantum mechanics 0103 physical sciences Physics::Atomic and Molecular Clusters General Materials Science 010306 general physics 0210 nano-technology |
| Zdroj: | Functional materials. 24:005-441 |
| ISSN: | 2218-2993 1027-5495 |
| DOI: | 10.15407/fm24.03.434 |
| Popis: | To characterize carborundum nanoclusters (nano-SiC) we employ the topological Kirchhoff index and average energy of molecular graphs. Additionally, electron-kinematic indexes which reflect an average curvature of electron paths in molecule, are invoked. The main polytypes, namely, 3C-SiC and 2pH-SiC, p = 1÷4, are investigated. It is established that the topological indexes make only a slight distinction between nano-SiC of the different polytypes. Quite the opposite, the electron curvature indexes provide a clear discrimination of the polytypes. In particular, the curvature indexes are ordered just in the same manner as the hexagonality measure known for such polytypes. For the electron curvatures, an effective algorithm is elaborated, allowing us to analyze nano-SiC with 10⁴ and more atoms even by using laptops. |
| Databáze: | OpenAIRE |
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