Implementation of a Memristor-Based Solid-State Memcapacitive Device
Autor: | Arto Raantala, Jacek Flak, Mika Prunnila, Mika Laiho, Tomi Haatainen |
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Jazyk: | angličtina |
Rok vydání: | 2014 |
Předmět: |
Materials science
Hardware_MEMORYSTRUCTURES Analogue electronics nonvolatile memory business.industry MIM capacitors capacitance Electrical engineering Memristor fabrication Capacitance law.invention Resistive random-access memory electrodes Non-volatile memory resistance Capacitor memristors law Electronic engineering Hardware_INTEGRATEDCIRCUITS Parasitic extraction business Electrical impedance |
Zdroj: | Flak, J, Rantala, A, Haatainen, T, Prunnila, M & Laiho, M 2014, Implementation of a Memristor-Based Solid-State Memcapacitive Device . in 14th International Workshop on Cellular Nanoscale Networks and their Applications (CNNA 2014) . IEEE Institute of Electrical and Electronic Engineers, 14th International Workshop on Cellular Nanoscale Networks and their Applications, CNNA 2014, Notre Dame, IN, United States, 29/07/14 . https://doi.org/10.1109/CNNA.2014.6888633 |
DOI: | 10.1109/CNNA.2014.6888633 |
Popis: | Memcapacitor is a new type of circiut element which can be useful in a wide range of applications including memory, tunable analog circuits, and analog neural networks [8]. It can be realized as a micro- or nanoscale solid-state device, possibly implemented within (or post-processed on top of) a CMOS chip. The approach based on combination of a memristor and a typical MIM capacitor is promising as it can benefit from the fabrication techniques being developed and used for memristors. These techniques are rapidly maturing, enabling large capacity resistive memory (ReRAM) chips [9], [10]. However, the memristor-based memcapacitors will require more complex techniques for their programming than memristors, because their impedance is frequency dependent [7] and the parasitics induced by direct access to the middle electrode may potentially disable some applications. |
Databáze: | OpenAIRE |
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