| Autor: |
Hong Wang, Subramaniam Arulkumaran, C. M. Manoj Kumar, K. Ranjan, Wei Meng Lim, Geok Ing Ng, S. Vicknesh, Kian Siong Ang, Guo-Qiang Lo, Sukant K. Tripathy, Chirn Chye Boon |
| Přispěvatelé: |
School of Electrical and Electronic Engineering, IEEE International Symposium on Radio-Frequency Integration Technology (2012 : Singapore), Temasek Laboratories |
| Rok vydání: |
2012 |
| Předmět: |
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| Zdroj: |
2012 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). |
| DOI: |
10.1109/rfit.2012.6401646 |
| Popis: |
This work presents our recent progress on addressing two major challenges to realizing GaN-Silicon integration namely epitaxial growth of GaN-on-Silicon and CMOS-compatible process. We have successfully demonstrated 0.3-μm gate-length GaN HEMTs on 8-inch Si(lll) substrate with f T of 28GHz and f max of of 64GHz. These device performances are comparable to our reported devices fabricated on 4-inch Si substrate. We have also developed a GaN HEMT process with CMOS-compatible non-gold metal scheme. Excellent ohmic contacts (R c =0.24 Ω-mm) with smooth surface morphology have been achieved which are comparable to those using conventional III-V gold-based ohmic contacts. 0.15-μπι gate-length GaN HEMTs fabricated with this process achieved f T and f max of 51 GHz and 50GHz respectively. The 5nm-thick AlGaN barrier HEMT exhibited three terminal OFF-state breakdown voltage (BV gd ) of 83 V. Our results demonstrate the feasibility of realizing CMOS-compatible high performance GaN HEMTs on 8-inch silicon substrates for future GaN-on-Si integration. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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