In(AsN) mid-infrared emission enhanced by rapid thermal annealing
| Autor: | Mario Capizzi, Amalia Patanè, Anthony Krier, Simone Birindelli, A. V. Velichko, Manoj Kesaria, Qiandong Zhuang |
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| Rok vydání: | 2015 |
| Předmět: |
Diffraction
Materials science Photoluminescence business.industry Annealing (metallurgy) Rapid thermal annealing (RTA) Activation energy Nitride Condensed Matter Physics In(As)N Mid-infrared Molecular beam epitaxy (MBE) LT-PL Crystallographic defect Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Photodiode law.invention law Optoelectronics Photonics business |
| Zdroj: | BASE-Bielefeld Academic Search Engine |
| ISSN: | 1350-4495 |
| DOI: | 10.1016/j.infrared.2014.11.016 |
| Popis: | We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley–Read–Hall recombination originating from elimination of point defects. For annealing temperatures up to 500°C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays. |
| Databáze: | OpenAIRE |
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