Sub-terahertz microsecond optically controlled switch with GaAs active element beyond the photoelectric threshold

Autor:	K. V. Vlasova, Gregory G. Denisov, S. V. Shubin, N. Andreev, M. L. Kulygin, S. H. Salahetdinov
Rok vydání:	2016
Předmět:	010302 applied physics Materials science business.industry Terahertz radiation Photoelectric effect Laser 01 natural sciences Optical switch law.invention 010309 optics Resonator Microsecond Optics Semiconductor law 0103 physical sciences Optoelectronics business Instrumentation Microwave cavity
Zdroj:	The Review of scientific instruments. 87(1)
ISSN:	1089-7623
Popis:	We study an unusual working regime of a recently developed sub-terahertz microwave cavity-based switch. The resonator cavity includes a semiconductor plate which is illuminated by laser emission beyond the photoelectric threshold. Despite a significant change to the conventional process of photoelectric effect we have found that the switch works. Typical switching performance rate is about 1 μs for the regime. A process of carrier density relaxation beyond the photoelectric threshold is discussed. An idea of diagnostic method for the semiconductor's quality is proposed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e7f6e7105eb663713c19895d7285b71 https://pubmed.ncbi.nlm.nih.gov/26827338 Zobrazit plný text záznamu