Terahertz detection with field-effect transistors: Intrinsic versus device sensitivity limits

Autor:	Maris Bauer, Viktor Krozer, Sebastian Boppela, G. Roskos, Alvydas Lisauskas, Justinas Zdanevicius, Jonas Matukas
Předmět:	Materials science Silicon Graphene business.industry Terahertz radiation Transistor chemistry.chemical_element Carbon nanotube law.invention Terahertz spectroscopy and technology chemistry CMOS law Optoelectronics Field-effect transistor business
Zdroj:	Scopus-Elsevier
Popis:	We discuss on both fundamental and practical limitations for detection sensitivity of terahertz radiation using different kinds of field-effect transistors. Presentation overview different material systems including silicon CMOS, AlGaN/GaN HEMTs, carbon nanotubes and graphene
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7e79889df878966b84034e68a5336227 http://www.scopus.com/inward/record.url?eid=2-s2.0-84923917143&partnerID=MN8TOARS Zobrazit plný text záznamu