Sub-ppm NO2 sensing in temperature cycled mode with Ga doped ZnO thin films deposited by RF sputtering
Autor: | Chabane Talhi, Frédéric Blanc, Lionel Presmanes, Inthuga Sinnarasa, Philippe Menini, Antoine Barnabé, Philippe Tailhades, Vignesh Gunasekaran, Yohann Thimont |
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Přispěvatelé: | Centre interuniversitaire de recherche et d'ingenierie des matériaux (CIRIMAT), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT), Service Instrumentation Conception Caractérisation (LAAS-I2C), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Vicenzo Guidi, European Project: NANOSEN-AQM, Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées |
Jazyk: | angličtina |
Rok vydání: | 2019 |
Předmět: |
Materials science
Silicon chemistry.chemical_element lcsh:A 02 engineering and technology 01 natural sciences NO2 sensor law.invention law Sputtering ZnO:Ga thin film Thin film [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics Heating element business.industry 010401 analytical chemistry Doping Sputter deposition 021001 nanoscience & nanotechnology 0104 chemical sciences n/a chemistry 13. Climate action Optoelectronics Photolithography lcsh:General Works 0210 nano-technology business Layer (electronics) |
Zdroj: | Proceedings 8th GOSPEL Workshop Gas sensors based on semiconducting metal oxides: basic understanding & application fields 8th GOSPEL Workshop Gas sensors based on semiconducting metal oxides: basic understanding & application fields, Vicenzo Guidi, Jun 2019, Ferrara, Italy. ⟨10.3390/proceedings2019014048⟩ Proceedings, Vol 14, Iss 1, p 48 (2019) |
DOI: | 10.3390/proceedings2019014048⟩ |
Popis: | International audience; In this work Ga doped ZnO thin films have been deposited by RF magnetron sputtering onto a silicon micro-hotplate and their structural, microstructural and gas sensing properties have been studied. ZnO:Ga thin film with a thickness of 90 nm has been deposited onto a silicon based micro-hotplates without any photolithography process thanks to a low cost and reliable stencil mask process. Sub-ppm sensing (500 ppb) of NO2 gas at low temperature (50 °C) has been obtained with promising responses R/R0 up to 18. Micro-hotplates have been prepared using photolithographic process. The system is composed by a heating element and sensing electrodes. They are both integrated in membrane in order to have a localized heating and sensing spot onto which the sensitive thin film is deposited. The microhotplates can operate with low consumption and can heat up to 500 °C with a good stability. This system has been already published in [1]. The use of lift-off process to restrict the deposition of the thin film onto central electrodes can lead to the dissolution and/or contamination of the sensitive layer. That's why the photolithographic method was avoided and a stencil mask process was used. |
Databáze: | OpenAIRE |
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