TRIAL FOR MAKING THREE DIMENSIONAL PZT CAPACITOR FOR HIGH DENSITY FERROELECTRIC RANDOM ACCESS MEMORY
| Autor: | Jun Minamidate, Youngsoo Park, June-mo Koo, Atsushi Nagai, Hiroshi Funakubo, Suk Pil Kim |
|---|---|
| Rok vydání: | 2006 |
| Předmět: |
Materials science
business.industry High density Chemical vapor deposition Condensed Matter Physics Ferroelectricity Electronic Optical and Magnetic Materials law.invention Capacitor Control and Systems Engineering law Ferroelectric RAM Electrode Materials Chemistry Ceramics and Composites Optoelectronics Deposition (phase transition) Metalorganic vapour phase epitaxy Electrical and Electronic Engineering business |
| Zdroj: | Integrated Ferroelectrics. 81:219-226 |
| ISSN: | 1607-8489 1058-4587 |
| Popis: | Three dimensional capacitors of Pb(Zr,Ti)O3 [PZT] together with the Ru electrodes were tried to deposit by metal organic chemical vapor deposition for realizing high density ferroelectric random access memory (FeRAM). Good conformability was obtained for both of CVD-Ru and PZT layers on the trenched substrates by optimizing the deposition conditions. In addition, PZT films deposited on Ru bottom electrode showed the good compositional conformability. Finally we demonstrated the Ru/PZT/Ru three dimensional capacitor. These data accelerate the development of three dimensional PZT capacitors. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|