Muon diffusion and trapping in chalcopyrite semiconductors
| Autor: | N. Ayres de Campos, Stephen J. Cox, M. V. Yakushev, João Gil, Alois Weidinger, R. C. Vilão, H. V. Alberto, J. Piroto Duarte |
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| Rok vydání: | 2003 |
| Předmět: |
Condensed Matter::Quantum Gases
Materials science Muon Condensed matter physics business.industry Trapping Condensed Matter Physics Crystallographic defect Molecular physics Chalcopyrite semiconductors Electronic Optical and Magnetic Materials Dipole Semiconductor Vacancy defect Diamagnetism Electrical and Electronic Engineering Diffusion (business) business Structural defects Muon trapping Muon diffusion |
| Zdroj: | Repositório Científico de Acesso Aberto de Portugal Repositório Científico de Acesso Aberto de Portugal (RCAAP) instacron:RCAAP |
| ISSN: | 0921-4526 |
| Popis: | The diffusion parameters of diamagnetic muons in chalcopyrites CuInSe2, CuInS2, CuInTe2, CuGaTe2 and (Ag0.25Cu0.75)InSe2 were obtained by [mu]SR methods. The variations among the different compositions were found to validate the anion-antibonding localization model. The application of a two-state model to the zero-field data revealed muon trapping by defects. The dipolar width at the trap and the number of jumps before trapping were determined. The Cu vacancy is identified as the trapping center in CuInSe2 and the energy depth of the trap has been determined. http://www.sciencedirect.com/science/article/B6TVH-47K37XD-1/1/c6039f1a6212b2c9af977ddf9c548867 |
| Databáze: | OpenAIRE |
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