Si-compatible ion selective oxide interconnects with high tunability
| Autor: | Dave H. A. Blank, Sankhanilay Roy Chowdhury, J. Sekulic, Cees J.M. van Rijn, Albert van den Berg, Johan E. ten Elshof, Klaas Keizer, Riaan Schmuhl |
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| Přispěvatelé: | Inorganic Materials Science, Faculty of Science and Technology |
| Jazyk: | angličtina |
| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Mechanical Engineering Cationic polymerization Oxide Ionic bonding Amorphous solid Ion chemistry.chemical_compound Potential difference chemistry Mechanics of Materials METIS-218578 Porous oxide Optoelectronics General Materials Science Composite material business Porous medium IR-47732 |
| Zdroj: | Advanced materials, 16(11), 900-904. Wiley-Blackwell |
| ISSN: | 0935-9648 |
| Popis: | A new class of porous oxide interconnects with a regularly perforated SiN support structure is presented here. The method is demonstrated by constructing -alumina, MCM-48 silica (see Figure), and amorphous titania interconnects. Ionic transport through the gate is established by externally varying the potential difference across the interconnects, which allows cationic, anionic, or no transport, depending on the magnitude and sign of the applied potential difference. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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