Synthesis and characterization of indium monoselenide (InSe) nanowires
| Autor: | T. Siciliano, Alessandra Genga, Antonio Tepore, M. Siciliano, Emanuela Filippo, G. Micocci |
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| Přispěvatelé: | Siciliano, Tiziana, Tepore, Antonio, Genga, Alessandra, Micocci, Gioacchino, Siciliano, Maria, Filippo, Emanuela |
| Rok vydání: | 2010 |
| Předmět: |
Materials science
Nanostructure Argon Nanowire chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Vacuum evaporation Crystallography Lattice constant nanowires chemistry synthesi Crystallite Electrical and Electronic Engineering Deposition (law) Indium |
| Zdroj: | Journal of Materials Science: Materials in Electronics. 22:649-653 |
| ISSN: | 1573-482X 0957-4522 |
| DOI: | 10.1007/s10854-010-0190-z |
| Popis: | Indium monoselenide (InSe) nanowires were grown by the thermal evaporation method in argon atmosphere without the presence of any catalysts using InSe polycrystalline powder as the source material. No nanostructure growth was observed at deposition temperatures below 580 °C. The nanostructures were discernable at temperatures above 620 °C. Pure InSe nanowires were obtained at the deposition temperature of 660 °C for 50 min. The diameters of the nanowires were from 50 to 240 nm and their lengths were up to several micrometers. X-ray diffraction spectrum reveals that the synthesized products were single-crystalline of the β-phase hexagonal structure of InSe with lattice constants a = 4.006 A and c = 16.642 A. The strong peak due to the reflection from the (004) crystal plane reveals that most nanowires grow with a strong preferred orientation. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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