High performance of graphene oxide-doped silicon oxide-based resistance random access memory
| Autor: | Syuan-Yong Huang, Yong-En Syu, Tian-Jian Chu, Jung-Hui Chen, Rui Zhang, Simon M. Sze, Kuan-Chang Chang, Yin-Chih Pan, Tsung-Ming Tsai, Kai-Huang Chen, Jen-Chung Lou, Chih-Cheng Shih, Tai-Fa Young, Ya-Liang Yang, Chih-Hung Pan, Yu-Ting Su, Ting-Chang Chang |
|---|---|
| Jazyk: | angličtina |
| Rok vydání: | 2013 |
| Předmět: |
Materials science
Oxide Nanochemistry Nanotechnology RRAM law.invention symbols.namesake chemistry.chemical_compound High performance Materials Science(all) Hopping conduction law General Materials Science Silicon oxide Graphene oxide Nano Express Graphene business.industry Doping Condensed Matter Physics Resistive random-access memory Active layer chemistry symbols Optoelectronics business Raman spectroscopy |
| Zdroj: | Nanoscale Research Letters |
| ISSN: | 1556-276X 1931-7573 |
| Popis: | In this letter, a double active layer (Zr:SiO x /C:SiO x ) resistive switching memory device with outstanding performance is presented. Through current fitting, hopping conduction mechanism is found in both high-resistance state (HRS) and low-resistance state (LRS) of double active layer RRAM devices. By analyzing Raman and FTIR spectra, we observed that graphene oxide exists in C:SiO x layer. Compared with single Zr:SiO x layer structure, Zr:SiO x /C:SiO x structure has superior performance, including low operating current, improved uniformity in both set and reset processes, and satisfactory endurance characteristics, all of which are attributed to the double-layer structure and the existence of graphene oxide flakes formed by the sputter process. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full text from SpringerLink